Defects in insulating crystals
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Defects in insulating crystals abstracts of contributed papers : international conference, Riga, May 18-23, 1981 by

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Published by Zinātne Pub. House in Riga .
Written in English


  • Crystals -- Defects -- Congresses.,
  • Dielectrics -- Congresses.

Book details:

Edition Notes

Other titlesDefekty v diėlektricheskikh kristallakh.
StatementK.K. Shvarts, Yu.A. Ekmanis, editors.
ContributionsShvart͡s︡, K. K., Ėkmanis, I͡U︡. A.
LC ClassificationsQD921 .D34 1981
The Physical Object
Pagination544 p. :
Number of Pages544
ID Numbers
Open LibraryOL3117826M
LC Control Number82227471

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This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants. The proceedings of a conference on defects in insulating materials. The book covers topics on point defects and extended defects, including theory and computer simulation in . one and two–photon spectroscopy of eu 2+ in mixed fluoride crystals. impurities in oxides. defects in photorefractive materials: a review on some recent developments. high resolution ftir spectroscopy to study vibrational modes of the oh-ion perturbed by mg–related . Proceedings of the International Conference on Defects in Insulating Crystals: A Special Issue of Crystal Lattice Defects and Amorphous Materials by S. Weinstein; M. A. Walker and a great selection of related books, art and collectibles available now at Optical Absorption of Impurities and Defects in Semiconducting Crystals: Hydrogen-like Centres (Springer Series in Solid-State Sciences) (): Bernard Pajot: Books5/5(1). In spite of a considerable amount of studies in incommensurate systems, relatively little attention has been paid to the role that intrinsic defects can play. The aim of this paper is less to give a Cited by: 1. View chapter Purchase book. Printed actuators. This means that dipolar interaction can act over a long range in the crystal. In this case, defects in insulating oxides can be a strong dipolar center, modifying the total properties of that crystal. Lattice defects in ionic crystals are interstitial ions and ion vacancies. The proceedings reflect the Twelfth International Conference on Defects in Insulating Materials, covering topics on point defects and extended defects including theory and computer simulation in various insulating materials, as well as applications in laser physics, imaging, data storage and radioactive waste disposal. Contents.

The defects distribute in a swirl pattern reflecting melt convection, rotation of the crystal, and temperature fluctuations at the solid–melt interface during crystal growth. A thermal oxidation process followed by an oxide strip and preferential etchant is generally required to observe these defects (Huff ). Defect Formation During Crystal Growth from the Melt An excellent discussion of defects found in oxide crystals grown from high and low The book is suitable for specialists and Author: P. Rudolph. Large numbers of oxygen vacancies are found in a region {le} nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The study of defects and disorder in solids remains a central topic in solid state science. Developments in the field continue to be promoted by new experimental and theoretical techniques, while further impetus for the study of disorder in solids is provided by the growing range of applications of.